The Nature of the Edge Emission Bands of n-CdSe/mica Epilayers

Abstract

We study the spectra of the boundary cathodoluminescence of n-CdSe undoped epilayers grown in a quasi-closed system on mica cristals. It was established that in the layers obtained at the evaporation temperature of 650° C substrate temperature of 480° C and the density of the excitation current j = 0.5 A/cm2 on the long wave wing of the edge emission bands appear equidistant lines associated with LO - phonon replicas non-phonon line, due to the radiative capture of the band electrons by acceptor Vcd - center of the CdSe crystals.