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The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures

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dc.contributor.author GUDZEV, V.
dc.contributor.author ZUBKOV, M. V.
dc.contributor.author LITVINOV, V. G.
dc.contributor.author MASLOV, A. D.
dc.date.accessioned 2020-11-29T16:07:45Z
dc.date.available 2020-11-29T16:07:45Z
dc.date.issued 2015
dc.identifier.citation GUDZEV, V., ZUBKOV, M. V., LITVINOV, V. G., MASLOV, A. D. The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 176-178. ISBN 978-9975-45-377-6. en_US
dc.identifier.isbn 978-9975-45-377-6
dc.identifier.uri http://repository.utm.md/handle/5014/11834
dc.description.abstract In this paper the high accuracy method of determination of the ionization energy of uniformly distributed defects in semiconductor barrier structures with inhomogeneous doped base is developed. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject deep level transient spectroscopy en_US
dc.subject determination of ionization energy en_US
dc.subject Schottky diode en_US
dc.title The Ionization Energy Determination of Deep Level Defects in Inhomogeneous Doped Semiconductor Barrier Structures en_US
dc.type Article en_US


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