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Some Aspects of Detection in the Low Temperatures Diode Detectors

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dc.contributor.author KERNER, Ia. I.
dc.date.accessioned 2020-11-29T16:16:20Z
dc.date.available 2020-11-29T16:16:20Z
dc.date.issued 2015
dc.identifier.citation KERNER, Ia. I. Some Aspects of Detection in the Low Temperatures Diode Detectors. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 182-184. ISBN 978-9975-45-377-6. en_US
dc.identifier.isbn 978-9975-45-377-6
dc.identifier.uri http://repository.utm.md/handle/5014/11835
dc.description.abstract Diode detectors (DD) are widely used in electronic information and communication systems. The numerical modeling of the electrical properties in the contacts of the high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) had been made. There were analyzed the possibilities to create DD based on these contacts and working at liquid nitrogen temperature 77.4 K. The influence of the contact potential difference on the DD parameters was analyzed. Also the numerical modeling of the electrical potential distribution and current passing in the contacts of normal metal or superconductor with semiconductor alloy bismuth-antimony (Bi-Sb) was made. There were analyzed possibilities to create DD based on these contacts and working at liquid helium temperature 4.2 K. The comparison with existent literature data shows the proposed DD can be 10100 times better. Therefore these DD are perspective for cryogenic electronics and there is an actual problem to elaborate them. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject diode detectors en_US
dc.subject semiconductors en_US
dc.subject superconductors en_US
dc.title Some Aspects of Detection in the Low Temperatures Diode Detectors en_US
dc.type Article en_US


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