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The Charge Relaxation in Semiconductors and in Elements of Microelectronics

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dc.contributor.author KHOLOMINA, T. A.
dc.date.accessioned 2020-11-29T16:21:42Z
dc.date.available 2020-11-29T16:21:42Z
dc.date.issued 2015
dc.identifier.citation KHOLOMINA, T. A. The Charge Relaxation in Semiconductors and in Elements of Microelectronics. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 179-181. ISBN 978-9975-45-377-6. en_US
dc.identifier.isbn 978-9975-45-377-6
dc.identifier.uri http://repository.utm.md/handle/5014/11836
dc.description.abstract The analysis of existing theoretical models for the description of relaxation processes in semiconductors and semiconductor barrier structures has been carried out. The criteria allowing the use of transport models of nonequilibrium charge carriers in a relaxation or recombination semiconductors have been formulated. It is shown that a space charge region (SCR) of semiconductor barrier structure under reverse bias can be considered as a relaxation semiconductor in which the relaxation time of charge carriers is determined by the span time while the base maintains the properties of a recombination semiconductor where the electric field is absent. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject electrical conductivity en_US
dc.subject Maxwell relaxation en_US
dc.subject recombination en_US
dc.subject relaxation time en_US
dc.subject screening length en_US
dc.subject drift length en_US
dc.subject ballisticity length en_US
dc.title The Charge Relaxation in Semiconductors and in Elements of Microelectronics en_US
dc.type Article en_US


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