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Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films

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dc.contributor.author SIENZ, S.
dc.contributor.author GERLACH, J. W.
dc.contributor.author HÖCHE, T.
dc.contributor.author SIDORENKO, A.
dc.contributor.author MAYERHÖFER, T. G.
dc.contributor.author BENNDORF, G.
dc.contributor.author RAUSCHENBACH, B.
dc.date.accessioned 2020-11-30T10:36:30Z
dc.date.available 2020-11-30T10:36:30Z
dc.date.issued 2004
dc.identifier.citation SIENZ, S., GERLACH, J. W., HÖCHE, T. et al. Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films. In: Journal of Crystal Growth. 2004, V. 264, Nr. 1, pp. 184-191. ISSN 0022-0248. en_US
dc.identifier.uri https://doi.org/10.1016/j.jcrysgro.2004.01.027
dc.identifier.uri http://repository.utm.md/handle/5014/11856
dc.description Access full text - https://doi.org/10.1016/j.jcrysgro.2004.01.027 en_US
dc.description.abstract Structural and electronic properties of hexagonal gallium nitride thin films on 6H–SiC, prepared by both low-energy ion-beam-assisted growth as well as molecular beam epitaxy (MBE), have been compared. According to X-ray diffraction and transmission electron microscopy, films deposited by ion-beam-assisted growth contain a significantly lower defect density than MBE films. Moreover, infrared reflectance spectroscopy and photoluminescence measurements substantiate the improvement of the electrical and optical parameters, respectively, if an ion assists the growth of the film. The advanced structural, optical and electrical properties are discussed in the context of enhanced surface mobility during growth, provoked by ion-beam irradiation, resulting in a reduced lattice defect formation probability. en_US
dc.language.iso en en_US
dc.publisher ELSEVIER en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ion beams en_US
dc.subject depositions en_US
dc.subject molecular beam epitaxy en_US
dc.subject epitaxy en_US
dc.subject gallium nitride en_US
dc.title Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films en_US
dc.type Article en_US


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