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Quantum Interference and Surface States Effects in Topological Insulator Bi0.83Sb0.17 Nanowires

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dc.contributor.author KONOPKO, Leonid
dc.contributor.author NIKOLAEVA, Albina
dc.contributor.author HUBER, Tito
dc.date.accessioned 2020-12-07T12:00:37Z
dc.date.available 2020-12-07T12:00:37Z
dc.date.issued 2017
dc.identifier.citation KONOPKO, Leonid, NIKOLAEVA, Albina, HUBER, Tito. Quantum Interference and Surface States Effects in Topological Insulator Bi0.83Sb0.17 Nanowires. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, pp. 69-72. ISBN 978-9975-4264-8-0. en_US
dc.identifier.isbn 978-9975-4264-8-0
dc.identifier.uri http://repository.utm.md/handle/5014/11926
dc.description.abstract We investigate the transport properties of topological insulator (TI) Bi0.83Sb0.17 nanowires. Single-crystal nanowire samples with diameters ranging from 75 nm to 1.1 μm are prepared using high frequency liquid phase casting in a glass capillary; cylindrical single crystals with (1011) orientation along the wire axis are produced. Bi0.83Sb0.17 is a narrow-gap semiconductor with an energy gap at the L point of the Brillouin zone, ΔE = 21 meV. The resistance of the samples increases with decreasing temperature, but a decrease in resistance is observed at low temperatures. This effect is a clear manifestation of TI properties (i.e., the presence of a highly conducting zone on the TI surface). We investigate the magnetoresistance of Bi0.83Sb0.17 nanowires at various magnetic field orientations. Shubnikov-de Haas oscillations are observed in Bi0.83Sb0.17 nanowires at T = 1.5 K, demonstrating the existence of high mobility (μS = 26700 - 47000 cm2V−1s−1) two-dimensional (2D) carriers in the surface areas of the nanowires, which are nearly perpendicular to the C3 axis. From the linear dependence of the nanowire conductance on nanowire diameter at T = 4.2 K, the square resistance Rsq of the surface states of the nanowires is obtained (Rsq = 70 Ohm). The oscillations of longitudinal magnetoresistance (MR) of 75 and 100-nm Bi0.83Sb0.17 nanowires with two periods B1 and B2 proportional to Φ0 and Φ0/2 were observed, where Φ0 = h/e is the flux quantum. A derivative of MR was measured at various inclined angles. In the range 0 – 60 degrees of inclined angle of magnetic field, the observed angle variation of the periods is in agreement with the theoretical dependence B(α) = B(0)/cosα of the flux quantization oscillations. However, the equidistant oscillations of MR exist in transverse magnetic fields under certain rotation angles. The observed effects are discussed. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject topological insulator en_US
dc.subject Bi-Sb en_US
dc.subject nanowires en_US
dc.subject quantum oscillations en_US
dc.subject Aharonov-Bohm oscillations en_US
dc.title Quantum Interference and Surface States Effects in Topological Insulator Bi0.83Sb0.17 Nanowires en_US
dc.type Article en_US


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