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Features of luminescence in semiconductor quantum wires in external electric and magnetic fields

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dc.contributor.author SINYAVSKY, Elerlange
dc.contributor.author KOSTYUKEVICH, Nina
dc.date.accessioned 2020-12-07T12:21:30Z
dc.date.available 2020-12-07T12:21:30Z
dc.date.issued 2017
dc.identifier.citation SINYAVSKY, Elerlange, KOSTYUKEVICH, Nina. Features of luminescence in semiconductor quantum wires in external electric and magnetic fields. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, pp. 80-83. ISBN 978-9975-4264-8-0. en_US
dc.identifier.isbn 978-9975-4264-8-0
dc.identifier.uri http://repository.utm.md/handle/5014/11929
dc.description.abstract The interband optical transitions in quantum wires in a model of a parabolic potential in an electric and magnetic field directed perpendicular to the nanowire axis are studied theoretically. The frequency dependences of the luminescence intensity of light are calculated when the interaction of carriers with a rough surface and with long-wave acoustic oscillations is taken into account. Graphs of the dependence of the luminescence half-width on the wire radius are obtained and a comparison with the experiment is made. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject interband optical transitions en_US
dc.subject nanowires en_US
dc.subject luminescence en_US
dc.subject absorption en_US
dc.subject rough surface en_US
dc.title Features of luminescence in semiconductor quantum wires in external electric and magnetic fields en_US
dc.type Article en_US


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