Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics

Abstract

The theory of superconductor-ferromagnet (S-F) layered heterostructures with two and more ferromagnetic layers predicts generation of long-range, odd-in-frequency triplet pairing at non-collinear alignment of magnetizations of the F-layers [1]. Based on ideas of the superconducting triplet spin-valve [2,3] we observed switching of the Co/CoOx/Cu41Ni59/Nb/Cu41Ni 59 proximity coupled heterostructures between normal and superconducting states– triplet spin-valve effect has been detected [4]. In the present work a superconducting Co/CoOx/Cu41Ni59/Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, that exhibits a superconducting transition temperature, Tc, depending on the history of external magnetic field applied parallel to the film plane.