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Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics

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dc.contributor.author MORARI, R.
dc.contributor.author LENK, D.
dc.contributor.author ZDRAVKOV, V.I.
dc.contributor.author ANTROPOV
dc.contributor.author PREPELITA, A. A.
dc.contributor.author ANTROPOV, E.V.
dc.contributor.author SOCROVISCIUC, A.
dc.contributor.author DONU, S.
dc.contributor.author CONDREA, E.
dc.contributor.author HORN, S.
dc.contributor.author TIDECKS, R.
dc.contributor.author TAGIROV, L.R.
dc.contributor.author SIDORENKO, A.S.
dc.date.accessioned 2020-12-08T09:56:11Z
dc.date.available 2020-12-08T09:56:11Z
dc.date.issued 2017
dc.identifier.citation MORARI, R., LENK, D., ZDRAVKOV, V. I., PREPELITA, A. A., ANTROPOV, E. V., SOCROVISCIUC, A., DONU, S., CONDREA, E., HORN, S., TIDECKS, R., TAGIROV, L. R., SIDORENKO, A. S. Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, p. 430. ISBN 978-9975-4264-8-0. en_US
dc.identifier.isbn 978-9975-4264-8-0
dc.identifier.uri http://repository.utm.md/handle/5014/11965
dc.description.abstract The theory of superconductor-ferromagnet (S-F) layered heterostructures with two and more ferromagnetic layers predicts generation of long-range, odd-in-frequency triplet pairing at non-collinear alignment of magnetizations of the F-layers [1]. Based on ideas of the superconducting triplet spin-valve [2,3] we observed switching of the Co/CoOx/Cu41Ni59/Nb/Cu41Ni 59 proximity coupled heterostructures between normal and superconducting states– triplet spin-valve effect has been detected [4]. In the present work a superconducting Co/CoOx/Cu41Ni59/Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, that exhibits a superconducting transition temperature, Tc, depending on the history of external magnetic field applied parallel to the film plane. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject superconductor-ferromagnet en_US
dc.subject MRAM en_US
dc.subject triplet spin-valve effect en_US
dc.title Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics en_US
dc.type Article en_US


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