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Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics
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| dc.contributor.author | MORARI, R. | |
| dc.contributor.author | LENK, D. | |
| dc.contributor.author | ZDRAVKOV, V.I. | |
| dc.contributor.author | ANTROPOV | |
| dc.contributor.author | PREPELITA, A. A. | |
| dc.contributor.author | ANTROPOV, E.V. | |
| dc.contributor.author | SOCROVISCIUC, A. | |
| dc.contributor.author | DONU, S. | |
| dc.contributor.author | CONDREA, E. | |
| dc.contributor.author | HORN, S. | |
| dc.contributor.author | TIDECKS, R. | |
| dc.contributor.author | TAGIROV, L.R. | |
| dc.contributor.author | SIDORENKO, A.S. | |
| dc.date.accessioned | 2020-12-08T09:56:11Z | |
| dc.date.available | 2020-12-08T09:56:11Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | MORARI, R., LENK, D., ZDRAVKOV, V. I., PREPELITA, A. A., ANTROPOV, E. V., SOCROVISCIUC, A., DONU, S., CONDREA, E., HORN, S., TIDECKS, R., TAGIROV, L. R., SIDORENKO, A. S. Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, p. 430. ISBN 978-9975-4264-8-0. | en_US |
| dc.identifier.isbn | 978-9975-4264-8-0 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/11965 | |
| dc.description.abstract | The theory of superconductor-ferromagnet (S-F) layered heterostructures with two and more ferromagnetic layers predicts generation of long-range, odd-in-frequency triplet pairing at non-collinear alignment of magnetizations of the F-layers [1]. Based on ideas of the superconducting triplet spin-valve [2,3] we observed switching of the Co/CoOx/Cu41Ni59/Nb/Cu41Ni 59 proximity coupled heterostructures between normal and superconducting states– triplet spin-valve effect has been detected [4]. In the present work a superconducting Co/CoOx/Cu41Ni59/Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, that exhibits a superconducting transition temperature, Tc, depending on the history of external magnetic field applied parallel to the film plane. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | superconductor-ferromagnet | en_US |
| dc.subject | MRAM | en_US |
| dc.subject | triplet spin-valve effect | en_US |
| dc.title | Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics | en_US |
| dc.type | Article | en_US |
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