Abstract:
Excellent optical properties of chalcogenide glasses make them interesting for optoelectronic devices in the visible (VIS) and, especially, in the near (NIR)- and mid-infrared (MIR) spectral regions. Special interest represents Ga-based chalcogenide glasses, such as Ga-Ge-As-S doped re-earth ions due to their potential applications as optical amplifiers for the 1.3 and 1.5 m telecommunication windows and for fiber lasers.. In this paper we report the experimental results on absorption and emission spectra of Ga1.7Ge25As8.3S65 doped with Sm3+, Nd 3+, Pr3+, Dy3+ and co-doped with Ho3++Dy3+ rare-earth ions. Ge-Ga-As-S glassy systems are a good host materials for the rare-earth ions, have a large glass forming regions, high transmission in the visible and mid-IR regions of the spectrum, high refractive index (n=2.42.5 at =0.63 m). It was demonstrated that introduction of Ga in Ge-As-S play a decisive role preventing the glass against devitrification.