dc.contributor.author | RADAUTSAN, S. I. | |
dc.contributor.author | MOLODYAN, I. P. | |
dc.contributor.author | BULYARSKII, S. V. | |
dc.contributor.author | SYRBU, N. N. | |
dc.contributor.author | TEZLEVAN, V. E. | |
dc.date.accessioned | 2021-01-05T17:07:40Z | |
dc.date.available | 2021-01-05T17:07:40Z | |
dc.date.issued | 1974 | |
dc.identifier.citation | RADAUTSAN, S. I., MOLODYAN, I. P., BULYARSKII, S. V. Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode. In: Physica Status Solidi (a), 1974, V. 21, N. 2, pp. 617-622. ISSN 0869-5652. | en_US |
dc.identifier.uri | https://doi.org/10.1002/pssa.2210210226 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12381 | |
dc.description | Access full text – https://doi.org/10.1002/pssa.2210210226 | en_US |
dc.description.abstract | The photoelectrical properties of Schottky barriers Au-CdIn2S4 in a broad energy region have been considered. The optical direct and indirect transitions and the spin-orbit splittings of zones Γ15(Γ7), Γ15(Γ8) in L1(L6) and Γ1(Γ6) have been revealed. The fine structure in the differential spectra of photoconductivity due to the phonons at the edge and in the centre of the Brillouin zone were observed. | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | diodes | en_US |
dc.subject | Schottky barriers | en_US |
dc.subject | photoconductivity | en_US |
dc.subject | phonons | en_US |
dc.title | Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: