Herein, we propose the manufacture of IR photodetector based on GaAs nanowire with good sensitivity and dynamic characteristics prepared by a cost-effective electrochemical etching of GaAs wafer, which does not require ...

Propunem o tehnologie electrochimică cost-efectivă în doi pași la temperatura camerei pentru obținerea nanomembranelor de Au. Un film subțire de Au cu grosime mai mică de 100 nm a fost depus prin depunerea electrochimică ...

Noutatea procesului tehnologic constă în combinarea a două etape tehnologice pentru producerea unor rețele de nanotuburi magnetice.

The invention relates to the technology for the production of nanostructured materials, in particular to processes for obtaining of semiconductor nanostructures by electrochemical etching, which can be used in microfluidics ...

Herein, we propose the manufacture of wide bandgap (Eg) semiconductor nanowires on narrow bandgap semiconductor support with good thermal conductivity, and the diameter of the nanowires varies in the range from 50 nm to 500 nm.