dc.contributor.author | PLEŞCA, A. | |
dc.date.accessioned | 2019-04-05T11:35:53Z | |
dc.date.available | 2019-04-05T11:35:53Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | PLEŞCA, A. Theoretical aspects related to junction temperature at power semiconductors. In: Meridian Ingineresc. 2008, nr. 2, pp. 65-70. ISSN 1683-853X. | en_US |
dc.identifier.issn | 1683-853X | |
dc.identifier.uri | http://repository.utm.md/handle/5014/1683 | |
dc.description.abstract | Thermal response of power semiconductor devices for a variety of one-shot and repetitive pulse inputs have been computed with the aim to offer valuable formulae for power circuit designers. It has been computed the temperature variation between junction of power semiconductor device and its case for step, slope, rectangular pulse input power, rectangular pulse series input power, increasing and decreasing triangle pulse series input power, triangle and trapezoidal pulse series input power and in the case of partial sinusoidal pulse series input power. A more exactly thermal calculation of power semiconductors can be done using modelling and simulation software. | en_US |
dc.description.abstract | În prezenta lucrare s-au determinat o serie de relaţii de calcul pentru temperatura joncţiunii în cazul dispozitivelor semiconductoare de putere, având ca punct de plecare impedanţa termică tranzitorie. S-a calculat diferenţa de temperatură dintre joncţiunea semiconductoare şi capsula dispozitivului pentru un impuls de flux termic, o variaţie liniar crescătoare, impuls rectangular, o serie de impulsuri dreptunghiulare, impulsuri de flux termic triunghiular crescătoare, respectiv descrescătoare, serie de impulsuri triunghiulare, trapezoidale şi fragmente de sinusoidă. O analiză termică exactă pentru dispozitivele semiconductoare de putere se poate realiza utilizând programe dedicate de modelare şi simulare termică. | ro |
dc.description.abstract | Dans le présent travail on a déterminé une série de relations de calcul pour la température de la jonction dans le cas des dispositifs semiconducteurs de pouvoir, ayant comme point de départ l’impédance thermique transitoire. On a calculé la différence de température entre la jonction semiconductrice et la capsule du dispositif pour un impulse de flux thermique, une variation linéaire ascendante, un impulse rectangulaire, une série d’impulses rectangulaires. On a calculé également la même différence de température pour des impulses de flux thermique triangulaire ascendants et descendants, une série d’impulses triangulaires, trapézoïdales et des fragments de sinusoïde. | fr |
dc.language.iso | en | en_US |
dc.publisher | Editura U.T.M. | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | power semiconductors | en_US |
dc.subject | semiconductoare de putere | en_US |
dc.title | Theoretical aspects related to junction temperature at power semiconductors | en_US |
dc.title.alternative | Aspecte teoretice privind temperatura joncţiunii la semiconductoarele de putere | en_US |
dc.title.alternative | Aspects théoriques à propos de jonction température à semiconducteurs de pouvoir | en_US |
dc.title.alternative | Теоретические аспекты относительно температуры в силовых p-n переходах полупроводников | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: