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Automation control system of the alloying process of gallium arsenide layers growth by epitaxial technology

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dc.contributor.author BARANOV, S.
dc.contributor.author COJUHARI, Irina
dc.contributor.author IZVOREANU, Bartolomeu
dc.contributor.author GORCEAC, L.
dc.date.accessioned 2021-09-17T08:29:48Z
dc.date.available 2021-09-17T08:29:48Z
dc.date.issued 2012
dc.identifier.citation BARANOV, S., COJUHARI, I., IZVOREANU, B. et al. Automation control system of the alloying process of gallium arsenide layers growth by epitaxial technology. In: International Conference and Exposition on Electrical and Power Engineering: proc. 25-27 Oct. 2012, Iasi, Romania, pp. 3-7. en_US
dc.identifier.uri https://doi.org/10.1109/ICEPE.2012.6463900
dc.identifier.uri http://repository.utm.md/handle/5014/17065
dc.description Access full text - https://doi.org/10.1109/ICEPE.2012.6463900 en_US
dc.description.abstract This paper proposes to control the thermal alloying process of GaAs epilayers growth by transport reaction in Ga-AsCI 3 -H 2 system. The thermal alloying process is controlled by using the universal two-channel programmable PID-controller TRM151, which permits automatic control of complicated objects with high precision. The thermal process was identified using the parametric model ARX (Auto-Regressive eXogenous) from System Identification Toolbox from MATLAB. The experimental technologist's program contains steps of p + -p o -n + photovoltaic structures achievement with damper layer on p-GaAs substrate. There is a possibility to obtain multiple periodical epitaxial layers structures with different dimensions and electro-physical properties, including nano-dimension structures, changing different steps of production. The tuning controller was performed using the maximal stability degree method. This control system minimizes the new technologies elaboration terms, accelerates the implementation of the elaborated technology in industry by reducing production costs, improving the product quality and its market competitiveness. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject epilayers en_US
dc.subject gallium arsenide en_US
dc.subject zinc en_US
dc.subject epitaxial growth en_US
dc.title Automation control system of the alloying process of gallium arsenide layers growth by epitaxial technology en_US
dc.type Article en_US


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