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183 GHz Mixer on InGaAs Schottky Diodes

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dc.contributor.author OPREA, I.
dc.contributor.author WALBER, A.
dc.contributor.author COJOCARI, O.
dc.contributor.author GIBSON, H.
dc.contributor.author ZIMMERMANN, R.
dc.contributor.author HARTNAGEL, H. L.
dc.date.accessioned 2021-09-27T11:17:41Z
dc.date.available 2021-09-27T11:17:41Z
dc.date.issued 2010
dc.identifier.citation OPREA, I., WALBER, A., COJOCARI, O. et al. 183 GHz Mixer on InGaAs Schottky Diodes. In: 21st International Symposium on Space Terahertz Technology, 23-25 March 2010, Oxford, 2010, pp. 159-160. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/17419
dc.description.abstract This work reports on experimental results of a 183 GHz sub-harmonically pumped mixer based on InGaAs antiparallel diode pair. The diode structure provides extremely low parasitic capacitance of about 2.5 fF. Roughly estimated series resistance junction capacitance and ideality factor 10Ω, 4fF/anode and 1.2, respectively. The optimal LO-Power is as low as 0.34 mW, whereas usable performance can be achieved even with less than 0.2 mW. en_US
dc.language.iso en en_US
dc.publisher Oxford en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject pumped mixers en_US
dc.subject mixers en_US
dc.subject indium gallium arsenide en_US
dc.title 183 GHz Mixer on InGaAs Schottky Diodes en_US
dc.type Article en_US


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