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Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate

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dc.contributor.author PYRTSAC, Constantin
dc.date.accessioned 2021-11-04T13:18:14Z
dc.date.available 2021-11-04T13:18:14Z
dc.date.issued 2015
dc.identifier.citation PYRTSAC, Constantin. Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate. In: Nanoscience Advances in CBRN Agents Detection, Information and Energy Security. NATO Science for Peace and Security Series A: Chemistry and Biology. 2015, pp. 73-83. ISBN 978-94-017-9697-2. en_US
dc.identifier.isbn 978-94-017-9697-2
dc.identifier.uri https://doi.org/10.1007/978-94-017-9697-2_8
dc.identifier.uri http://repository.utm.md/handle/5014/17890
dc.description Access full text: https://doi.org/10.1007/978-94-017-9697-2_8 en_US
dc.description.abstract Thin films of various types are key components of modern microelectronics. By use of the dynamic nanoindentation method, Cu/Si structures with different thicknesses of the Cu film (t = 85, 470 and 1,000 nm) were investigated. It is shown that the film thickness and the wide range of maximum loads applied are some of the main factors influencing the deformation peculiarities and mechanical properties (Young’s modulus E and hardness H) of the film/substrate structures. en_US
dc.language.iso en en_US
dc.publisher Springer Nature Switzerland en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thin films en_US
dc.subject films en_US
dc.subject substrates en_US
dc.title Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate en_US
dc.type Article en_US


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