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Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets

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dc.contributor.author COLIBABA, G.V.
dc.contributor.author RUSNAC, D.
dc.contributor.author FEDOROV, V.
dc.contributor.author COSTRIUCOVA, N.
dc.contributor.author MONAICO, E.V.
dc.contributor.author POTLOG, T.
dc.date.accessioned 2021-11-11T13:26:01Z
dc.date.available 2021-11-11T13:26:01Z
dc.date.issued 2021
dc.identifier.citation COLIBABA, G.V., RUSNAC, D., FEDOROV, V., ș. a. Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 63. ISBN 978-9975-72-592-7. en_US
dc.identifier.isbn 978-9975-72-592-7
dc.identifier.uri http://repository.utm.md/handle/5014/17973
dc.description Only Abstract. en_US
dc.description.abstract Sintering of ZnO+Me2O3 (Me = Al, Ga, In) powder via chemical vapor transport based on HCl has been developed. The electrical properties of ZnO thin films obtained by DC magnetron sputtering of ZnO ceramic targets have been studied. Transparency, morphology, crystallinity and crystallite size of thin films have also been investigated. ZnO:Ga thin films with a resistivity of 2.510–4 cm have been successfully obtained. The films doped with Al have lower conductivity due to weak sputtering of insoluble Al2O3 dielectric inclusions in ceramics. In the case of sintering of ZnO together with In2O3, a significant loss of the doping material is observed. en_US
dc.language.iso en en_US
dc.publisher Universitatea Tehnică a Moldovei en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ZnO Thin Films en_US
dc.subject ceramics en_US
dc.subject magnetron sputtering en_US
dc.title Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets en_US
dc.type Article en_US


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