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Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity
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| dc.contributor.author | STAMOV, I.G. | |
| dc.contributor.author | TKACHENKO, D.V. | |
| dc.contributor.author | STREL’CHUK, YU. | |
| dc.date.accessioned | 2021-11-12T09:32:08Z | |
| dc.date.available | 2021-11-12T09:32:08Z | |
| dc.date.issued | 2021 | |
| dc.identifier.citation | STAMOV, I.G., TKACHENKO, D.V., STREL’CHUK, YU. Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 67. ISBN 978-9975-72-592-7. | en_US |
| dc.identifier.isbn | 978-9975-72-592-7 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/17991 | |
| dc.description | Only Abstract | en_US |
| dc.description.abstract | The surface-barrier photosensitive structures based on zinc diarsenide crystals with metals have been produced. The electrical and photovoltaic properties of these structures were investigated. The photocurrent spectra and electrical characteristics are determined by the parameters of the semiconductor and the physicochemical properties of the contacting metals. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universitatea Tehnică a Moldovei | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | surface-barrier structures on Zinc | en_US |
| dc.subject | zinc diarsenide crystals | en_US |
| dc.subject | semiconductor | en_US |
| dc.title | Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity | en_US |
| dc.type | Article | en_US |
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