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Cathodoluminescence and X-Ray Luminescence of ZnIn2S4 and CdGa2S4 Single Crystals
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| dc.contributor.author | ARAMA, E. | |
| dc.contributor.author | PÎNTEA, V. | |
| dc.contributor.author | SHEMYAKOVA, T. | |
| dc.date.accessioned | 2021-11-16T09:11:39Z | |
| dc.date.available | 2021-11-16T09:11:39Z | |
| dc.date.issued | 2021 | |
| dc.identifier.citation | ARAMA, E., PÎNTEA, V., SHEMYAKOVA, T. Cathodoluminescence and X-Ray Luminescence of ZnIn2S4 and CdGa2S4 Single Crystals. In: ICNMBE-2021: the 5th International Conference on Nanotechnologies and Biomedical Engineering, November 3-5, 2021: Program and abstract book. Chişinău, 2021, p. 97. ISBN 978-9975-72-592-7. | en_US |
| dc.identifier.isbn | 978-9975-72-592-7 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/18079 | |
| dc.description | Only Abstract | en_US |
| dc.description.abstract | Zinc thioindate and gallium thiogallate single crystals were grown by a chemical vapor transport method. The cathodoluminescence and X-ray luminescence spectra of ZnIn2S4 and CdGa2S4 single crystals were studied. From cathodoluminescence spectra of ZnIn2S4 at low temperatures the forbidden gap width of (2.96 ± 0.02) eV at 80 K and optical depth of the deep acceptor level EA = (EV + 0.30) eV were determined. In the X-ray luminescence spectra of CdGa2S4 a single emission band is observed with an energy maximum at 2.14 eV and a slope within the high-energy range at approximately 2.34 eV identified as optical transitions of donor-acceptor type. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universitatea Tehnică a Moldovei | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | cathodoluminesc | en_US |
| dc.subject | luminescence | en_US |
| dc.title | Cathodoluminescence and X-Ray Luminescence of ZnIn2S4 and CdGa2S4 Single Crystals | en_US |
| dc.type | Article | en_US |
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