X-Ray Luminescence in ZnIn2S4, CdGa2S4 and Zn3In2S6

MACHUGA, A.; RADU, R.; PINTEA, V.; ARAMA, E.; ZHITAR, V.; SHEMYAKOVA, T.

dc.contributor.author	MACHUGA, A.
dc.contributor.author	RADU, R.
dc.contributor.author	PINTEA, V.
dc.contributor.author	ARAMA, E.
dc.contributor.author	ZHITAR, V.
dc.contributor.author	SHEMYAKOVA, T.
dc.date.accessioned	2021-12-24T11:07:23Z
dc.date.available	2021-12-24T11:07:23Z
dc.date.issued	2007
dc.identifier.citation	MACHUGA, A., RADU, R., PINTEA, V. et al. X-Ray Luminescence in ZnIn2S4, CdGa2S4 and Zn3In2S6. In: International Semiconductor Conference: proc. IEEE, 15 Oct.-17 Sept. 2007, Sinaia, Romania, 2014, pp. 377-380. ISBN 978-1-4244-0847-4.	en_US
dc.identifier.isbn	978-1-4244-0847-4
dc.identifier.uri	https://doi.org/10.1109/ICEPE.2014.6970030
dc.identifier.uri	http://repository.utm.md/handle/5014/18565
dc.description	Acces full text - https://doi.org/10.1109/ICEPE.2014.6970030	en_US
dc.description.abstract	Results related to investigation of X-ray induced luminescence spectra in ZnIn 2 S 4 , CdGa 2 S 4 and Zn 3 In 2 S 6 single crystals measured at 300 and 80 K are presented. The spectra mainly consist of one band with maximum at 1.67 and 1.97 eV (80 K), respectively, generated due to donor-acceptor recombination.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	luminescence	en_US
dc.subject	crystals	en_US
dc.subject	single crystals	en_US
dc.subject	spectra	en_US
dc.subject	medical tests	en_US
dc.subject	conducting materials	en_US
dc.title	X-Ray Luminescence in ZnIn2S4, CdGa2S4 and Zn3In2S6	en_US
dc.type	Article	en_US