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Semiconductor – semimetal transition induced by anisotropic deformation in bi quantum wires
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| dc.contributor.author | PARA, Gh. I. | |
| dc.date.accessioned | 2022-01-31T17:20:54Z | |
| dc.date.available | 2022-01-31T17:20:54Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | PARA, Gh. I. Semiconductor – semimetal transition induced by anisotropic deformation in bi quantum wires. In: Materials Science and Condensed Matter Physics: mater. conf. internaț. ed. 5, 13-17 septembrie 2010, Chișinău, Republica Moldova, 2010, p. 219. | en_US |
| dc.identifier.uri | http://repository.utm.md/handle/5014/19036 | |
| dc.description.abstract | In this paper the temperature dependences of resistance R(T) in bismuth nanowires in the field of the transition semimetal-semiconductor which predicted in paper [1] at diameters of wires d <100 nm in the range of temperatures 4,2 – 300 К were investigated. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Institutul de Fizică Aplicată | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | bismuth nanowires | en_US |
| dc.subject | nanowires | en_US |
| dc.subject | transitions semimetal-semiconductors | en_US |
| dc.subject | semiconductors | en_US |
| dc.title | Semiconductor – semimetal transition induced by anisotropic deformation in bi quantum wires | en_US |
| dc.type | Article | en_US |
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