dc.contributor.author | POSTICA, Vasile | |
dc.contributor.author | SCHÜTT, F. | |
dc.contributor.author | LUPAN, C. | |
dc.contributor.author | KRÜGER, H. | |
dc.contributor.author | ADELUNG, R. | |
dc.contributor.author | LUPAN, O. | |
dc.date.accessioned | 2022-02-03T12:48:23Z | |
dc.date.available | 2022-02-03T12:48:23Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | POSTICA, Vasile, SCHÜTT, F., LUPAN, C. et al. Electrical Characterization of Individual Boron Nitride Nanowall Structures. In: 5th International Conference on Nanotechnologies and Biomedical Engineering, ICNBME: proc. IFMBE, 3-5 Nov. 2021, Chișinău, Moldova, 2022, V. 87, pp. 17-23. ISBN 978-3-030-92328-0. | en_US |
dc.identifier.isbn | 978-3-030-92328-0 | |
dc.identifier.uri | https://doi.org/10.1007/978-3-030-92328-0_3 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/19146 | |
dc.description | Acces full text - https://doi.org/10.1007/978-3-030-92328-0_3 | en_US |
dc.description.abstract | In this work, the individual hexagonal boron nitride (h-BN) microtubular structures with different diameter (ranging from ≈0.2 to ≈2.5 μm) and a wall thickness below 25 nm were investigated for the first time by integration on SiO2/Si substrate using a method based on focused ion beam deposition (FIB/SEM). The current-voltage (I-V) measurements were carried out in from a bias of −40 V to +40 V and in a temperature range from 25 to 100 ℃. All fabricated devices showed excellent insulating properties and the resistance of ≈111 GΩ was calculated, which was attributed mainly to the top SiO2 layer of the substrate measured without h-BN. The obtained results elucidate the excellent potential of the boron nitride microtubular structures with nanowalls to be used as high-quality shielding materials of other nano- and microstructures for application in nanoelectronics, nanophotonics and power electronics, where a relatively wide range of operating temperature is necessary. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer, Cham | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | boron nitride | en_US |
dc.subject | microdevices | en_US |
dc.subject | microtubes | en_US |
dc.subject | nanomaterials | en_US |
dc.subject | insulators | en_US |
dc.title | Influence of Double Feedback on Stationary States of Quantum Dots Lasers | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: