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Controlling the Degree of Hydrophilicity/Hydrophobicity of Semiconductor Surfaces via Porosification and Metal Deposition

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dc.contributor.author MONAICO, E. V.
dc.contributor.author BUSUIOC, S.
dc.contributor.author TIGINYANU, I. M.
dc.date.accessioned 2022-02-04T08:03:21Z
dc.date.available 2022-02-04T08:03:21Z
dc.date.issued 2022
dc.identifier.citation MONAICO, E. V., BUSUIOC, S., TIGINYANU, I. M. Controlling the Degree of Hydrophilicity/Hydrophobicity of Semiconductor Surfaces via Porosification and Metal Deposition. In: 5th International Conference on Nanotechnologies and Biomedical Engineering, ICNBME: proc. IFMBE, 3-5 Nov. 2021, Chișinău, Moldova, 2022, V. 87, pp. 62-69. ISBN 978-3-030-92328-0. en_US
dc.identifier.isbn 978-3-030-92328-0
dc.identifier.uri https://doi.org/10.1007/978-3-030-92328-0_9
dc.identifier.uri http://repository.utm.md/handle/5014/19156
dc.description Acces full text - https://doi.org/10.1007/978-3-030-92328-0_9 en_US
dc.description.abstract In this paper we present a systematic study of bulk GaAs wafers and gold-decorated GaAs surfaces exhibiting hydrophilic and hydrophobic behaviors. The wetting properties can be switched to superhydrophilicity and superhydrophilicity by simple electrochemical etching providing engineered porous morphologies. The results open interesting technological perspectives for the exploitation of GaAs surfaces. en_US
dc.language.iso en en_US
dc.publisher Springer, Cham en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium arsenide surfaces en_US
dc.subject bulk wafers en_US
dc.subject wafers en_US
dc.subject gold-decorated surfaces en_US
dc.subject surfaces en_US
dc.subject wetting en_US
dc.subject electrochemical etching en_US
dc.subject porous morphologies en_US
dc.title Controlling the Degree of Hydrophilicity/Hydrophobicity of Semiconductor Surfaces via Porosification and Metal Deposition en_US
dc.type Article en_US


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