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Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content

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dc.contributor.author COLIBABA, G. V.
dc.contributor.author COSTRIUCOVA, N.
dc.contributor.author RUSNAC, D.
dc.contributor.author BUSUIOC, S.
dc.contributor.author MONAICO, E. V.
dc.date.accessioned 2022-02-07T07:38:20Z
dc.date.available 2022-02-07T07:38:20Z
dc.date.issued 2022
dc.identifier.citation COLIBABA, G. V., COSTRIUCOVA, N., RUSNAC, D. et al. Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content. In: 5th International Conference on Nanotechnologies and Biomedical Engineering, ICNBME: proc. IFMBE, 3-5 Nov. 2021, Chișinău, Moldova, 2022, V. 87, pp. 610-616. ISBN 978-3-030-92328-0. en_US
dc.identifier.isbn 978-3-030-92328-0
dc.identifier.uri https://doi.org/10.1007/978-3-030-92328-0_78
dc.identifier.uri http://repository.utm.md/handle/5014/19205
dc.description Acces full text - https://doi.org/10.1007/978-3-030-92328-0_78 en_US
dc.description.abstract ZnO:Ga:Cl ceramics were sintered using chemical vapor transport technique. Ga content was varied in a range of 0−10 mol %. The wettability of unpolished and polished surface of ZnO:Ga:Cl ceramics was investigated. The polished and etched surface of ZnO ceramics is in a hydrophilic state. The presence of Ga impurity leads to a strong increase in the water contact angle to 131°. This behavior is attributed to a high concentration of free electrons, which suppress the formation of intrinsic surface defects acting as traps for water molecules. Air pockets on unpolished surfaces of ZnO:Ga:Cl ceramics are an additional factor that increases the water contact angle. en_US
dc.language.iso en en_US
dc.publisher Springer, Cham en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject zinc oxide ceramics en_US
dc.title Wettability of Highly Conductive ZnO:Ga:Cl CVT Ceramics with Various Ga Content en_US
dc.type Article en_US


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