Electronic processes in bismuth type doped semimetals

BODIUL, P. P.; GARABAZHIU, V. F.; GITSU, D. V.

dc.contributor.author	BODIUL, P. P.
dc.contributor.author	GARABAZHIU, V. F.
dc.contributor.author	GITSU, D. V.
dc.date.accessioned	2022-02-22T11:20:33Z
dc.date.available	2022-02-22T11:20:33Z
dc.date.issued	1995
dc.identifier.citation	BODIUL, P. P., GARABAZHIU, V. F., GITSU, D. V. et al. Electronic processes in bismuth type doped semimetals. In: International Semiconductor Conference: proc. of IEEE CAS '95, 11-14 Oct. 1995, Sinaia, Romania, 1995, pp. 74-76. ISBN 0-7803-2647-4.	en_US
dc.identifier.isbn	0-7803-2647-4
dc.identifier.uri	https://doi.org/10.1109/SMICND.1995.495047
dc.identifier.uri	http://repository.utm.md/handle/5014/19455
dc.description	Acces full text - https://doi.org/10.1109/SMICND.1995.495047	en_US
dc.description.abstract	Properties of highly doped bismuth alloys with impurities of the VI group are investigated. Anomalous behaviour of statistical and kinetical characteristics dependence upon the impurity concentration is interpreted within the framework of a notion of impurity states in semimetal systems.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	bismuth alloys	en_US
dc.subject	semimetal systems	en_US
dc.title	Electronic processes in bismuth type doped semimetals	en_US
dc.type	Article	en_US