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Electronic processes in bismuth type doped semimetals

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dc.contributor.author BODIUL, P. P.
dc.contributor.author GARABAZHIU, V. F.
dc.contributor.author GITSU, D. V.
dc.date.accessioned 2022-02-22T11:20:33Z
dc.date.available 2022-02-22T11:20:33Z
dc.date.issued 1995
dc.identifier.citation BODIUL, P. P., GARABAZHIU, V. F., GITSU, D. V. et al. Electronic processes in bismuth type doped semimetals. In: International Semiconductor Conference: proc. of IEEE CAS '95, 11-14 Oct. 1995, Sinaia, Romania, 1995, pp. 74-76. ISBN 0-7803-2647-4. en_US
dc.identifier.isbn 0-7803-2647-4
dc.identifier.uri https://doi.org/10.1109/SMICND.1995.495047
dc.identifier.uri http://repository.utm.md/handle/5014/19455
dc.description Acces full text - https://doi.org/10.1109/SMICND.1995.495047 en_US
dc.description.abstract Properties of highly doped bismuth alloys with impurities of the VI group are investigated. Anomalous behaviour of statistical and kinetical characteristics dependence upon the impurity concentration is interpreted within the framework of a notion of impurity states in semimetal systems. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject bismuth alloys en_US
dc.subject semimetal systems en_US
dc.title Electronic processes in bismuth type doped semimetals en_US
dc.type Article en_US


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