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Peculiarities of diffusion thermopower with impurity electron topological transition in heavily doped bismuth wires

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dc.contributor.author NIKOLAEVA, A. A.
dc.contributor.author KONOPKO, L. A.
dc.contributor.author BODIUL, P. P.
dc.contributor.author TSURKAN, A. K.
dc.date.accessioned 2022-02-23T07:58:04Z
dc.date.available 2022-02-23T07:58:04Z
dc.date.issued 2014
dc.identifier.citation NIKOLAEVA, A. A., KONOPKO, L. A., BODIUL, P. P. et al. Peculiarities of diffusion thermopower with impurity electron topological transition in heavily doped bismuth wires. In: Journal of Thermoelectricity. 2014, N. 3, pp. 28-40. ISSN: 1607-8829. en_US
dc.identifier.issn 1607-8829
dc.identifier.uri http://repository.utm.md/handle/5014/19458
dc.description.abstract This paper presents a series of investigations of differential thermopower and resistance in the temperature range of 4.2 – 300 K of samples shaped as glass-coated single-crystal Bi wires heavily doped with Sn acceptor impurity. An anomaly in the form of a triple sign change in the temperature dependences of thermopower α(Т) is detected. The effect is treated in terms of impurity electron topological transition (ETT), i.e. origination of Σ-band by doping bismuth wires with Sn acceptor impurity. The method of measuring Shubnikov-de-Haas oscillations in the main crystallographic directions in parallel (H I) and perpendicular (H I) directions was used to calculate the basic parameters of hole Fermi surfaces at points Т and L of the Brillouin zone, which made it possible to estimate the concentration and energy position of Σ -band in Bi and confirm that anomalies observed on traditional dependences of diffusion thermopower are specific features of ETT. The effect can be used for the discovery of ETT in the cases when research on the Fermi surface by oscillation methods is impossible, for instance, with heavy doping and in hightemperature region. en_US
dc.language.iso en en_US
dc.publisher Институт термоэлектричества Национальной академии наук и Министерства образования и науки Украины en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject electronic topological transitions en_US
dc.subject Shubnikov-de-Haas oscillations en_US
dc.subject oscillations en_US
dc.subject thermopower en_US
dc.subject bismuth wires en_US
dc.subject wires en_US
dc.title Peculiarities of diffusion thermopower with impurity electron topological transition in heavily doped bismuth wires en_US
dc.type Article en_US


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