Abstract:
Generalizing data of the most typical peculiarities of influence of the impurities (isovalent (Sb, As), donor (Te, Se) and acceptor (Pb, Sn) ones) on the charge transport phenomena in bismuth are given. Proceedingfrom importance of the application aspect of the problem, in the main the most expressive experimental data and clear physical models are considered in order to avoid using of complex and awkward expressions.