dc.contributor.author | SUMAN, Victor | |
dc.contributor.author | MORARI, Vadim | |
dc.contributor.author | RUSU, Emil V. | |
dc.contributor.author | GHIMPU, Lidia | |
dc.contributor.author | URSAKI, Veaceslav V. | |
dc.date.accessioned | 2022-04-08T10:06:04Z | |
dc.date.available | 2022-04-08T10:06:04Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | SUMAN, Victor, MORARI, Vadim, RUSU, Emil V. et al. Electrophysical properties of ITO:Ga2O3 films grown by RF magnetron sputtering. In: Moldavian Journal of the Physical Sciences, 2021, N. 2(20), pp. 145-150. ISSN 1810-648X. | en_US |
dc.identifier.issn | 1810-648X | |
dc.identifier.uri | https://doi.org/10.53081/mjps.2021.20-2.05 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/20044 | |
dc.description.abstract | In this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimum film growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied. | en_US |
dc.description.abstract | În această lucrare au fost studiate proprietățile electrofizice ale filmelor ITO:Ga2O3 obținute prin pulverizare magnetron RF pe substraturi de sticlă și safir. Ca sursă de evaporare au servit țintele confecționate prin presare mecanică a pulberelor de ITO și Ga2O3. Au fos tcercetate caracteristicile electrofizice în dependență de parametrii optimi de obținere a filmelor, cum ar fi: coraportul dintre fluxul de argon și oxigen, temperature substratului, puterea de descărcare a magnetronului. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thin films | en_US |
dc.subject | films | en_US |
dc.subject | pelicule subțiri | en_US |
dc.title | Electrophysical properties of ITO:Ga2O3 films grown by RF magnetron sputtering | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: