DSpace Repository

Electrophysical properties of ITO:Ga2O3 films grown by RF magnetron sputtering

Show simple item record

dc.contributor.author SUMAN, Victor
dc.contributor.author MORARI, Vadim
dc.contributor.author RUSU, Emil V.
dc.contributor.author GHIMPU, Lidia
dc.contributor.author URSAKI, Veaceslav V.
dc.date.accessioned 2022-04-08T10:06:04Z
dc.date.available 2022-04-08T10:06:04Z
dc.date.issued 2021
dc.identifier.citation SUMAN, Victor, MORARI, Vadim, RUSU, Emil V. et al. Electrophysical properties of ITO:Ga2O3 films grown by RF magnetron sputtering. In: Moldavian Journal of the Physical Sciences, 2021, N. 2(20), pp. 145-150. ISSN 1810-648X. en_US
dc.identifier.issn 1810-648X
dc.identifier.uri https://doi.org/10.53081/mjps.2021.20-2.05
dc.identifier.uri http://repository.utm.md/handle/5014/20044
dc.description.abstract In this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimum film growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied. en_US
dc.description.abstract În această lucrare au fost studiate proprietățile electrofizice ale filmelor ITO:Ga2O3 obținute prin pulverizare magnetron RF pe substraturi de sticlă și safir. Ca sursă de evaporare au servit țintele confecționate prin presare mecanică a pulberelor de ITO și Ga2O3. Au fos tcercetate caracteristicile electrofizice în dependență de parametrii optimi de obținere a filmelor, cum ar fi: coraportul dintre fluxul de argon și oxigen, temperature substratului, puterea de descărcare a magnetronului. en_US
dc.language.iso en en_US
dc.publisher Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thin films en_US
dc.subject films en_US
dc.subject pelicule subțiri en_US
dc.title Electrophysical properties of ITO:Ga2O3 films grown by RF magnetron sputtering en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Advanced Search

Browse

My Account