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UV radiation sensors with unitary and binary superficial barrier

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dc.contributor.author DOROGAN, Valerian
dc.contributor.author VIERU, Tatiana
dc.contributor.author KOSYAK, V.
dc.contributor.author DAMASKIN, I.
dc.contributor.author CHIRITA, F.
dc.date.accessioned 2022-04-21T11:49:54Z
dc.date.available 2022-04-21T11:49:54Z
dc.date.issued 1998
dc.identifier.citation DOROGAN, Valerian, VIERU, Tatiana, KOSYAK, V. et al. UV radiation sensors with unitary and binary superficial barrier. In: Fifth Conference on Optics: proc. ROMOPTO '97, 9-12 Sept., 1997, Bucharest, Romania, 1998, V. 3405, p. 1007-1012. en_US
dc.identifier.uri https://doi.org/10.1117/12.312705
dc.identifier.uri http://repository.utm.md/handle/5014/20198
dc.description Acces full text: https://doi.org/10.1117/12.312705 en_US
dc.description.abstract UV radiation sensors with unitary and binary superficial barrier, made on the basis of GaP - SnO2 and GaAs - AlGaAs - SnO2 heterostructures, are presented in the paper. Technological and constructive factors, which permit to realize a high conversion efficiency and to exclude the influence of visible spectrum upon the photoanswer, are analyzed. It was established that the presence of an isotypical superficial potential barrier permits to suppress the photoanswer component formed by absorption of visible and infrared radiation in semiconductor structure bulk. en_US
dc.language.iso en en_US
dc.publisher SPIE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject UV radiation sensors en_US
dc.subject photoanswers en_US
dc.subject visible radiation en_US
dc.subject infrared radiation en_US
dc.title UV radiation sensors with unitary and binary superficial barrier en_US
dc.type Article en_US


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