Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single-quantum-well buried-heterostructure laser diodes

ISPASOIU, Radu G.; PUSCAS, Niculae N.; SMEU, Emil; BOTEZ, C. E.; IACOVLEV, Vladimir P.; MEREUTZA, Alexandru Z.; SURUCEANU, Grigore I.

Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single-quantum-well buried-heterostructure laser diodes

ISPASOIU, Radu G.; PUSCAS, Niculae N.; SMEU, Emil; BOTEZ, C. E.; IACOVLEV, Vladimir P.; MEREUTZA, Alexandru Z.; SURUCEANU, Grigore I.

URI: https://doi.org/10.1117/12.312791
http://repository.utm.md/handle/5014/20200

Date: 1998

Abstract:

In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation of the LD mirror facet layers, where the nonlinear optical interaction occurs.