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Characterization of strained quantum well InGaAs/AlGaAs buried heterostructure lasers using internal second-harmonic generation

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dc.contributor.author IACOVLEV, Vladimir P.
dc.contributor.author LUPU, Anatol T.
dc.contributor.author SYRBOU, Alexei V.
dc.contributor.author SURUCEANU, Grigore I.
dc.contributor.author KRAVETSKY, I. V.
dc.contributor.author CULIUC, Leonid L.
dc.contributor.author CHAND, Naresh
dc.date.accessioned 2022-04-22T07:07:58Z
dc.date.available 2022-04-22T07:07:58Z
dc.date.issued 1994
dc.identifier.citation IACOVLEV, Vladimir P., LUPU, Anatol T., SYRBOU, Alexei V. et al. Characterization of strained quantum well InGaAs/AlGaAs buried heterostructure lasers using internal second-harmonic generation. In: Laser Diode Technology and Applications 6. 1994. –V. 2148, pp. 440-448. en_US
dc.identifier.uri https://doi.org/10.1117/12.176641
dc.identifier.uri http://repository.utm.md/handle/5014/20203
dc.description Access full text - https://doi.org/10.1117/12.176641 en_US
dc.description.abstract In this paper the investigation of internal optical second harmonic generation (SH) of buried heterostructure (BH) InGaAs/AlGaAs strained quantum well laser diodes is performed for additional characterization of these devices which are capable of operating at high power densities as high as 3 MW/cm<SUP>2</SUP> at room temperature and 0.1 MW/cm<SUP>2</SUP> at 190 degree(s)C. The blue-green emission level is of the order of 10<SUP>5</SUP> photons per second for laser diodes with 3micrometers active layer width at fundamental optical power of 2.0 mW. This relatively high SH intensity level makes it possible to observe the light spot in optical microscopes and to detect SH signal with a standard photon counting system in wide operation current and ambient temperature intervals. Variation of the SH signal at the constant fundamental harmonic (FH) power indicates that changes in the near field occur. SH far-field patterns of laser diodes reflect the effects of SH radiation spot size reduction in comparison with FH radiation spot size and FH waves nonlinear interactions in the waveguide material. en_US
dc.language.iso en en_US
dc.publisher SPIE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject laser diodes en_US
dc.subject quantum-well laser diodes en_US
dc.subject waveguides en_US
dc.subject buried heterostructures en_US
dc.title Characterization of strained quantum well InGaAs/AlGaAs buried heterostructure lasers using internal second-harmonic generation en_US
dc.type Article en_US


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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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