Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers

Abstract

Data are presented on buried-heterostructure (BH) AlGaAs/ GaAs and InGaAs/AlGaAs quantum-well diode lasers (DLs) fabricated by low-temperature liquid phase mesa melt etching and regrowth. The basic laser structures were grown by either molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Native oxides were used as a mask in the processes of melt etching and regrowth. Measurements of excess mirror temperature and parameters of internal second-harmonic generation (SHG) were used for DL characterization. The equalization of beam divergence in both planes, perpendicular and parallel to the active layer, was accomplished by using cylindrical microlenses, at 1 W of radiant power in continuous-wave (cw) operation. The results on medical applications and pumping Er31-doped YAG crystals are reported.