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Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers

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dc.contributor.author SYRBU, Alexei V.
dc.contributor.author MEREUTZA, Alexandru Z.
dc.contributor.author SURUCEANU, Grigore I.
dc.contributor.author IACOVLEV, Vladimir P.
dc.contributor.author CALIMAN, Andrei N.
dc.contributor.author LUPU, Anatol T.
dc.contributor.author VIERU, Stanislav T.
dc.contributor.author PREDESCU, Marius
dc.contributor.author POPESCU, Ion M.
dc.contributor.author ISPASOIU, Radu G.
dc.date.accessioned 2022-04-22T10:34:58Z
dc.date.available 2022-04-22T10:34:58Z
dc.date.issued 1996
dc.identifier.citation SYRBU, Alexei V., MEREUTZA, Alexandru Z., SURUCEANU, Grigore I. et al. Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers. In: Optical Engineering. 1996. –V. 35, N. 5, pp. 1278-1283. en_US
dc.identifier.uri https://doi.org/10.1117/1.600667
dc.identifier.uri http://repository.utm.md/handle/5014/20215
dc.description Access full text - https://doi.org/10.1117/1.600667 en_US
dc.description.abstract Data are presented on buried-heterostructure (BH) AlGaAs/ GaAs and InGaAs/AlGaAs quantum-well diode lasers (DLs) fabricated by low-temperature liquid phase mesa melt etching and regrowth. The basic laser structures were grown by either molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Native oxides were used as a mask in the processes of melt etching and regrowth. Measurements of excess mirror temperature and parameters of internal second-harmonic generation (SHG) were used for DL characterization. The equalization of beam divergence in both planes, perpendicular and parallel to the active layer, was accomplished by using cylindrical microlenses, at 1 W of radiant power in continuous-wave (cw) operation. The results on medical applications and pumping Er31-doped YAG crystals are reported. en_US
dc.language.iso en en_US
dc.publisher SPIE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject diode lasers en_US
dc.subject semiconductor lasers en_US
dc.subject oxides en_US
dc.subject electrochemical etching en_US
dc.subject lasers en_US
dc.subject liquid phase epitaxy en_US
dc.subject quantum wells en_US
dc.title Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers en_US
dc.type Article en_US


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