Optoelectronic properties of gallium nitride thin membranes

BRANISTE, Tudor; POPA, Veaceslav; VOLCIUC, Olesea; TIGINYANU, Ion

dc.contributor.author	BRANISTE, Tudor
dc.contributor.author	POPA, Veaceslav
dc.contributor.author	VOLCIUC, Olesea
dc.contributor.author	TIGINYANU, Ion
dc.date.accessioned	2022-05-13T07:52:44Z
dc.date.available	2022-05-13T07:52:44Z
dc.date.issued	2015
dc.identifier.citation	BRANISTE, Tudor, POPA, Veaceslav, VOLCIUC, Olesea et al. Optoelectronic properties of gallium nitride thin membranes. In: 11th International Conference on Optics “Micro- to Nano-Photonics IV”, ROMOPTO 2015, 1-4 Sept, 2015, Bucharest, Romania, 2015.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/20267
dc.description.abstract	We present the results of a systematic study of persistent photoconductivity (PPC) generated by UV-excitation in thin membranes based on crystalline GaN. The PPC was found to be optically quenched under extrinsic excitation (quanta energy lower than Eg). Interesting optoelectronic phenomena have been evidenced in nanoperforated GaN membranes. In particular, nanoperforation-induced optical quenching of PPC was found to occur at temperatures T < 100 K under intense intrinsic excitation. The obtained results are discussed taking into account strong surface localization of charge carriers in GaN thin membranes as well as UV-induced reactions occurring at surface states under intense intrinsic excitation.	en_US
dc.language.iso	en	en_US
dc.publisher	Romanian Academy	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	photoconductivity	en_US
dc.subject	thin membranes	en_US
dc.subject	membranes	en_US
dc.subject	nanoperforated membranes	en_US
dc.subject	gallium nitride membranes	en_US
dc.title	Optoelectronic properties of gallium nitride thin membranes	en_US
dc.type	Article	en_US