DSpace Repository

New take-off of Gallium Nitride

Show simple item record

dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2022-05-13T10:07:38Z
dc.date.available 2022-05-13T10:07:38Z
dc.date.issued 2015
dc.identifier.citation FOMIN, V. New take-off of Gallium Nitride. In: Science and Society- the Use of Light: Workshop în cadrul conf. ICNBME - International Conference on Nanotechnologies and Biomedical Engineering, 24-25 Sept, 2015, Chişinău, Republic of Moldova: Abstracts, 2015, p. 11. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/20276
dc.description Only Abstract
dc.description.abstract Gallium Nitride (GaN) is a wide-band-gap semiconductor compound (Eg = 3.4 eV at 300 K) which over the last decades played a major role in the development of modern solid-state lighting industry. An intensive investigation of this compound started in the 70-ies of the last century, but without visible success in pushing real applications. In the absence of native bulk material, GaN epilayers were grown on foreign substrates and, as a result of the large lattice mismatch and difference in thermal expansion coefficients, the overgrown films contained a high amount of threading dislocations. The fascinating point, however, is that even in the presence of huge amounts of dislocations, sometimes exceeding 1010 cm-2, gallium nitride exhibits intense luminescence, a property that makes the compound unique in comparison with other III-V materials as, for instance, GaAs, GaP and InP. GaN-based blue light emitting diodes have been developed by middle of 90-ies and subsequently commercialized successfully. No doubt that lighting technologies based on GaN and related nitrides will continue their impactful evolution, especially taking into account the recent demonstration of electrically pumped inversionless polariton lasing at room temperature from a bulk GaN-based microcavity diode (P. Battacharya et al, Phys. Rev. Lett. 112, 236802, 2014). Novel developments based on GaN nanostructures will be presented in the report. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium nitride en_US
dc.subject semiconductor compounds en_US
dc.subject epilayers en_US
dc.subject luminescence en_US
dc.title New take-off of Gallium Nitride en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Advanced Search

Browse

My Account