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Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers

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dc.contributor.author SIRKELI, V. P.
dc.contributor.author YILMAZOGLU, O.
dc.contributor.author KÜPPERS, F.
dc.contributor.author HARTNAGEL, H. L.
dc.date.accessioned 2022-05-16T10:00:44Z
dc.date.available 2022-05-16T10:00:44Z
dc.date.issued 2015
dc.identifier.citation SIRKELI, V. P., YILMAZOGLU, O., KÜPPERS, F. et al. Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers. In: Science and Society- the Use of Light: Workshop în cadrul conf. ICNBME - International Conference on Nanotechnologies and Biomedical Engineering, 24-25 Sept, 2015, Chişinău, Republic of Moldova: Abstracts, 2015, p. 37. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/20301
dc.description Only Abstract en_US
dc.description.abstract We report the results from numerical simulations of p-GaN/n-ZnO light-emitting diodes (LEDs) with different architectures. p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED structures have been examinated using one-dimensional (1D) Schrödinger-Poisson solver simulator. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject light-emitting diodes en_US
dc.subject electroluminescence devices en_US
dc.subject gallium nitride en_US
dc.subject zinc oxide en_US
dc.subject nickel oxide en_US
dc.subject zinc selenide en_US
dc.subject LED devices en_US
dc.title Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers en_US
dc.type Article en_US


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