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Process for wide bandgap semiconductor nanowires obtaining on narrow bandgap semiconductor substrate

Process for wide bandgap semiconductor nanowires obtaining on narrow bandgap semiconductor substrate

MONAICO, Elena; MONAICO, Eduard; URSAKI, Veaceslav; TIGINYANU, Ion
URI: http://repository.utm.md/handle/5014/20334
Date: 2022

Abstract:

Herein, we propose the manufacture of wide bandgap (Eg) semiconductor nanowires on narrow bandgap semiconductor support with good thermal conductivity, and the diameter of the nanowires varies in the range from 50 nm to 500 nm.

Description:

Istitution: Technical University of Moldova. Patent application No. a 2021 0054 from 06.08.2021. Exibits Clasification: Class no. 14. - Other.

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  • 2022
    Proceedings of the 14th Edition of European Exhibition of Creativity and Innovation, Romania
Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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