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GaN nanomembranes as memristors with self-rectification

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dc.contributor.author DRAGOMAN, Mircea
dc.contributor.author CIOBANU, Vladimir
dc.contributor.author DRAGOMAN, Daniela
dc.contributor.author DINESCU, Adrian
dc.contributor.author BRANISTE, Tudor
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2022-05-23T12:57:36Z
dc.date.available 2022-05-23T12:57:36Z
dc.date.issued 2017
dc.identifier.citation DRAGOMAN, Mircea, CIOBANU, Vladimir, DRAGOMAN, Daniela et al. GaN nanomembranes as memristors with self-rectification. In: The International Conference on Memristive Materials, Devices and Systems: abstracts of MEMRISYS 2017, 3-6 Sept, April, 2017, Athens, Greece, 2017, Abstr. P2.23. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/20365
dc.description.abstract We have recently shown that GaN ultrathin membranes suspended on GaN nanowires having a thickness of 15 nm and planar dimensions of 12×184 microns are acting as memristive devices. The physical effect which explains this unexpected behavior resides in the migration of the negatively charged deep traps, which are stacked in the membrane volume, towards the unoccupied surface states. We have connected in parallel several GaN memristors and found that these memristor circuits are mimicking simple learning mechanisms such as habituation and dishabituation followed by storage of the electrical response. The learning time depends on the number of memristors connected in parallel and is decreasing with the increase of the number of memristors. en_US
dc.language.iso en en_US
dc.publisher Institute of Nanocience and Nanotechnology, INN en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ultrathin membranes en_US
dc.subject memristors en_US
dc.subject memristive devices en_US
dc.title GaN nanomembranes as memristors with self-rectification en_US
dc.type Article en_US


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