Abstract:
The invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=Igas/Iair =1.3 for 100 ppm H2 gas at room temperature and S= Igas/Iair =118 at operating temperature of 250 oC.
Description:
Patent application entry no. 1974, 2019. . Exibits Clasification: 12. Safety, protection and rescue of people.