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High resolution semiconductor switch
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High resolution semiconductor switch
STAMOV, I.
;
SÎRBU, N.
;
DOROGAN, A.
URI:
http://repository.utm.md/handle/5014/20424
Date:
2019
Abstract:
The active layer of the high resolution semiconductor switch is based on single crystal compound Ag3AsS3 placed between metal electrodes.
Description:
Pending patent registration. Exibits Clasification: 5. Industrial and laboratory equipments,10. Information Technology and Communication.
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The following license files are associated with this item:
Creative Commons
This item appears in the following Collection(s)
2019
Proceedings of the 11th Edition of European Exhibition of Creativity and Innovation, Romania
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States
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