dc.contributor.author | STAMOV, I. | |
dc.contributor.author | SÎRBU, N. | |
dc.contributor.author | DOROGAN, A. | |
dc.date.accessioned | 2022-05-26T08:46:44Z | |
dc.date.available | 2022-05-26T08:46:44Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | STAMOV, I., SÎRBU, N., DOROGAN, A. High resolution semiconductor switch. In: European Exhibition of Creativity and Innovation: proc. of the 11th ed. EUROINVENT, Iasi, Romania, 2019, p. 175. ISSN 2601-4564. e-ISSN 2601-4572. | en_US |
dc.identifier.issn | 2601-4564 | |
dc.identifier.issn | 2601-4572 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/20424 | |
dc.description | Pending patent registration. Exibits Clasification: 5. Industrial and laboratory equipments,10. Information Technology and Communication. | en_US |
dc.description.abstract | The active layer of the high resolution semiconductor switch is based on single crystal compound Ag3AsS3 placed between metal electrodes. | en_US |
dc.language | en | |
dc.publisher | Romanian Inventors Forum | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | invenţii | en_US |
dc.subject | inventions | en_US |
dc.subject | semiconductor switches | en_US |
dc.subject | crystal compounds | en_US |
dc.subject | electronic scales | en_US |
dc.title | High resolution semiconductor switch | en_US |
dc.type | Article | en_US |
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