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High resolution semiconductor switch

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dc.contributor.author STAMOV, I.
dc.contributor.author SÎRBU, N.
dc.contributor.author DOROGAN, A.
dc.date.accessioned 2022-05-26T08:46:44Z
dc.date.available 2022-05-26T08:46:44Z
dc.date.issued 2019
dc.identifier.citation STAMOV, I., SÎRBU, N., DOROGAN, A. High resolution semiconductor switch. In: European Exhibition of Creativity and Innovation: proc. of the 11th ed. EUROINVENT, Iasi, Romania, 2019, p. 175. ISSN 2601-4564. e-ISSN 2601-4572. en_US
dc.identifier.issn 2601-4564
dc.identifier.issn 2601-4572
dc.identifier.uri http://repository.utm.md/handle/5014/20424
dc.description Pending patent registration. Exibits Clasification: 5. Industrial and laboratory equipments,10. Information Technology and Communication. en_US
dc.description.abstract The active layer of the high resolution semiconductor switch is based on single crystal compound Ag3AsS3 placed between metal electrodes. en_US
dc.language en
dc.publisher Romanian Inventors Forum en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject invenţii en_US
dc.subject inventions en_US
dc.subject semiconductor switches en_US
dc.subject crystal compounds en_US
dc.subject electronic scales en_US
dc.title High resolution semiconductor switch en_US
dc.type Article en_US


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  • 2019
    Proceedings of the 11th Edition of European Exhibition of Creativity and Innovation, Romania

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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