Functional Capabilities of Two-Barrier Semiconductor Structures

Abstract

This investigation considers the possibility of creating highly sensitive devices in the optical (CdTe, Si) and X-ray (CdTe) ranges of electromagnetic waves. The process of mutual compensation of photocurrents arising in opposite potential barriers overlapping the sublayer, with longitudinal absorption of radiation, leads to pronounced short-wavelength and long-wavelength maxima in the spectral distribution of intensity or photocurrent. Using structures based on cadmium and silicon telluride, as examples, the phenomenon of the sign reversal of the spectral photocurrent and the possibilities of measuring wavelengths are demonstrated. To study the photoelectronic processes occurring in these structures, the obtained mathematical expressions are used, which relate the parameters of the structure and optical radiation. The algorithm developed using these expressions is based on a new spectral analysis mechanism, which makes it possible to implement it as affordable, small-sized, low-material, and low-power devices. All this is considered in the context of solving urgent problems of quantitative remote identification of the components of an optically transparent medium suitable for solving environmental issues.