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Electrical Properties of the (Copper, Dysprosium)-Containing Complex Compound

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dc.contributor.author SEMENOV, Andriy
dc.contributor.author MARTYNIUK, Volodymyr
dc.contributor.author EVSEEVA, Maria
dc.contributor.author OSADCHUK, Oleksandr
dc.contributor.author SEMENOVA, Olena
dc.contributor.author YUSHCHENKO, Tetyana
dc.date.accessioned 2023-11-01T11:44:50Z
dc.date.available 2023-11-01T11:44:50Z
dc.date.issued 2023
dc.identifier.citation SEMENOV, Andriy, MARTYNIUK, Volodymyr, EVSEEVA, Maria et al. Electrical Properties of the (Copper, Dysprosium)-Containing Complex Compound. In: 6th International Conference on Nanotechnologies and Biomedical Engineering: proc. of ICNBME-2023, 20–23, 2023, Chisinau, vol. 1: Nanotechnologies and Nano-biomaterials for Applications in Medicine, 2023, p. 31-40. ISBN 978-3-031-42774-9. e-ISBN 978-3-031-42775-6. en_US
dc.identifier.isbn 978-3-031-42774-9
dc.identifier.isbn 978-3-031-42775-6
dc.identifier.uri https://doi.org/10.1007/978-3-031-42775-6_4
dc.identifier.uri http://repository.utm.md/handle/5014/24583
dc.description Acces full text - https://doi.org/10.1007/978-3-031-42775-6_4 en_US
dc.description.abstract A new semiconductor material tetrakis-µ3-(methoxy)(methanol)-pentakis(acetylacetonato) (tricopper(II), dysprosium(III)) (I) was synthesized, with the following composition: [Cu3Dy(AA)5(OCH3)4CH3OH], where HAA=H3C–C(O)–CH2–C(O)–CH3. By data of the elemental analysis and physic-chemical research methods, the obtained complex compound (I) was established to contain atoms of copper (II) and dysprosium (III) in a ratio Cu:Dy = 3:1, and its composition was established to correspond to a gross formula: Cu3DyO15C30H51. The electrical conductivity of the obtained material was measured in compressed form. The following parameters were calculated for the complex compound (I): the number of valence electrons in one molecule was 276; the mass of one molecule was 166.777·10–20 kg; the total number of molecules in a cylindrical sample with a 0.138 g mass and a 19.72·10–9 m3 volume was 8.274·1013 molecules. The resistivity of the pressed sample decreases from 9·1010 to 7·104 Ω·cm in a 303–413 K temperature range. This confirms that the synthesized compound is a semiconductor with a bandgap of 1.38 eV. The conductive properties of the complex compound as a heat-sensitive element were studied. An experimental sample of compressed material with geometric sizes of 1·10−3 m × 0.5·10−3m × 0.5·10−3 m was employed for investigations. en_US
dc.language.iso en en_US
dc.publisher Springer Nature Switzerland en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductor materials en_US
dc.subject complex compounds en_US
dc.subject semiconductors en_US
dc.subject magnetic fields en_US
dc.subject conductive properties en_US
dc.title Electrical Properties of the (Copper, Dysprosium)-Containing Complex Compound en_US
dc.type Article en_US


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  • 2023
    6th International Conference on Nanotechnologies and Biomedical Engineering, September 20–23, 2023, Chisinau, Moldova

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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