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Synthesis Technology for CdSe/CdTe Heterojunctions and Characterization of Their Photoelectric Properties

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dc.contributor.author GAGARA, Ludmila
dc.contributor.author LUNGU, Ion
dc.contributor.author GHIMPU, Lidia
dc.contributor.author POTLOG, Tamara
dc.date.accessioned 2023-11-03T10:58:26Z
dc.date.available 2023-11-03T10:58:26Z
dc.date.issued 2023
dc.identifier.citation GAGARA, Ludmila, LUNGU, Ion, GHIMPU, Lidia et al. Synthesis Technology for CdSe/CdTe Heterojunctions and Characterization of Their Photoelectric Properties. In: 6th International Conference on Nanotechnologies and Biomedical Engineering: proc. of ICNBME-2023, 20–23, 2023, Chisinau, vol. 1: Nanotechnologies and Nano-biomaterials for Applications in Medicine, 2023, p. 206-213. ISBN 978-3-031-42774-9. e-ISBN 978-3-031-42775-6. en_US
dc.identifier.isbn 978-3-031-42774-9
dc.identifier.isbn 978-3-031-42775-6
dc.identifier.uri https://doi.org/10.1007/978-3-031-42775-6_23
dc.identifier.uri http://repository.utm.md/handle/5014/24627
dc.description Acces full text - https://doi.org/10.1007/978-3-031-42775-6_23 en_US
dc.description.abstract This paper presents the results of studying the photoelectric properties of CdSe/CdTe heterojunctions synthesized by the hot-wall epitaxy method. The CdSe/CdTe heterojunctions were manufactured by consecutive growth of CdSe and CdTe layers on a conductive ITO/glass substrate purchased from Solaronix Swiss. As ohmic contact for CdTe, Ni was deposited by thermal evaporation. The CdSe layer thickness (1–3 µm) was controlled according to the time of deposition of the layer. The temperature of the substrate and the source for CdTe growing were 400 ℃ and 520 ℃, respectively and reached the thickness 15 µm. The synthesis process for heterojunctions with CdTe layers includes the treatment of the entire structure in a CdCl2 solution, followed by annealing in air at a temperature of 450 ℃ for 30 min. Upon the deposition of CdTe layer, due to the diffusion of Se into the growing CdTe film, a transition layer of the CdSexTe1–x solid solution is formed at the interface, evidenced by the spectral dependence of the photocurrent. The investigation of the current-voltage characteristics at different intensity of illuminations shown that nonideality factor n has a value of 1.7–2.0, which indicate a generation-recombination mechanism of current in the CdSe/CdTe heterojunctions. The best photovoltaic parameters for CdSe/CdTe heterojunctions were achieved for structures with thicker CdSe layer and are as follows: JSC = 24.6 mA/cm2, UOC = 730 mV, FF = 0.5, η = 7.6%. en_US
dc.language.iso en en_US
dc.publisher Springer Nature Switzerland en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject heterojunctions en_US
dc.subject solar cells en_US
dc.subject photovoltaic parameters en_US
dc.title Synthesis Technology for CdSe/CdTe Heterojunctions and Characterization of Their Photoelectric Properties en_US
dc.type Article en_US


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  • 2023
    6th International Conference on Nanotechnologies and Biomedical Engineering, September 20–23, 2023, Chisinau, Moldova

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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