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Photodetector Based on β-Ga2O3 Nanowires on GaSxSe1-X Solid Solution Substrate

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dc.contributor.author SPRINCEAN, Veaceslav
dc.contributor.author CARAMAN, Mihail
dc.contributor.author QIU, Haoyi
dc.contributor.author TJARDTS, Tim
dc.contributor.author SEREACOV, Alexandr
dc.contributor.author AKTAS, Cenk
dc.contributor.author ADELUNG, Rainer
dc.contributor.author LUPAN, Oleg
dc.date.accessioned 2023-11-03T12:47:32Z
dc.date.available 2023-11-03T12:47:32Z
dc.date.issued 2023
dc.identifier.citation SPRINCEAN, Veaceslav, CARAMAN, Mihail, QIU, Haoyi et al. Photodetector Based on β-Ga2O3 Nanowires on GaSxSe1-X Solid Solution Substrate. In: 6th International Conference on Nanotechnologies and Biomedical Engineering: proc. of ICNBME-2023, 20–23, 2023, Chisinau, vol. 1: Nanotechnologies and Nano-biomaterials for Applications in Medicine, 2023, p. 231-242. ISBN 978-3-031-42774-9. e-ISBN 978-3-031-42775-6. en_US
dc.identifier.isbn 978-3-031-42774-9
dc.identifier.isbn 978-3-031-42775-6
dc.identifier.uri https://doi.org/10.1007/978-3-031-42775-6_26
dc.identifier.uri http://repository.utm.md/handle/5014/24630
dc.description Acces full text - https://doi.org/10.1007/978-3-031-42775-6_26 en_US
dc.description.abstract The detection of radiation in the ultraviolet C (UVC) region (100–280 nm) is of great importance for numerous technical applications, such as fire detection in security devices, tracking astronomical missile trajectories, chemical-biological analyses, and medicinal applications. Wide bandgap semiconductors have emerged as ideal materials for electronic devices operating in this spectral range. Among the various promising materials, β-Ga2O3, a gallium oxide with a monoclinic crystal lattice, has garnered significant attention along with AlxGa1-xN, AlN, and BN. While thin layers of AlxGa1-xN suffer from structural instability, AlN exhibits photosensitivity to radiation with wavelengths shorter than 215 nm. On the other hand, cubic BN possesses an absorption band fundamental in the UV-vacuum region (λ ≤ 195 nm). Notably, β-Ga2O3, with its direct n-type energy bands and a bandgap of 4.5–4.9 eV, demonstrates high photosensitivity in the UVC range, making it an excellent material for photoreceptors in the 220–280 nm range. In this study, we investigate the elemental chemical composition, absorption band edge, vibrational and photoresponsive properties of β-Ga2O3 nano-wire/nano-ribbon assemblies on a substrate of monocrystalline lamellae from GaSxSe1-x solid solutions (x = 0.17). The nano-wire assemblies were grown using thermal oxidation of gallium compound semiconductors at temperatures ranging from 750 to 950 ℃ in an oxygen or water vapor-enriched atmosphere. Our findings provide valuable insights into the potential of β-Ga2O3 nanostructures as efficient photoreceptors for UVC radiation detection. en_US
dc.language.iso en en_US
dc.publisher Springer Nature Switzerland en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ultraviolet radiation en_US
dc.subject wide bandgap semiconductors en_US
dc.subject nano-wires en_US
dc.subject photoreceptors en_US
dc.subject thermal oxidation en_US
dc.subject photodetection en_US
dc.title Photodetector Based on β-Ga2O3 Nanowires on GaSxSe1-X Solid Solution Substrate en_US
dc.type Article en_US


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  • 2023
    6th International Conference on Nanotechnologies and Biomedical Engineering, September 20–23, 2023, Chisinau, Moldova

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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