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Effect of nanostructuring to response kinetics of tellurium thin films by nitrogen dioxide sensing

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dc.contributor.author TSIULYANU, Dumitru
dc.contributor.author CIOBANU, Marina
dc.contributor.author MOCREAC, Olga
dc.date.accessioned 2023-11-20T10:36:29Z
dc.date.available 2023-11-20T10:36:29Z
dc.date.issued 2020
dc.identifier.citation TSIULYANU, Dumitru, CIOBANU, Marina, MOCREAC, Olga. Effect of nanostructuring to response kinetics of tellurium thin films by nitrogen dioxide sensing. In: Electronic Processes in Organic and Inorganic Materials: proc. of ICEPOM-12, 1 – 5 June, 2020, Kamianets-Podіlskyi, Ukraine: Conference abstracts, 2020, p. [9]. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/24925
dc.description.abstract The work is conducted to clarify the effect of structural dimensionality of tellurium thin films on gas (NO2) sensing at room temperature. Nanostructuring of Te films has been realized via three methods (Fig.1): nanocrystalization (a), growing of amorphous Te films with nanoscaled thicknesses onto uniform Si/SiO2 wafers (b) or onto priory nanostructured (Al2O3) substrates (c). Pure Te thin films were crown via thermal vacuum evaporation but their surface morphology, microstructure and thickness were investigated using SEM, XRD and AFM respectively. The films were supplied with either Au or Pt electrodes, thus the resistive gas sensing elements have been built. en_US
dc.language.iso en en_US
dc.publisher Taylor & Francis, Inc. Molecular Crystals and Liquid Crystals en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject tellurium thin films en_US
dc.subject nitrogen dioxide en_US
dc.subject gas sensing en_US
dc.title Effect of nanostructuring to response kinetics of tellurium thin films by nitrogen dioxide sensing en_US
dc.type Article en_US


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