dc.contributor.author | MOCREAC, O. | |
dc.contributor.author | TSIULYANU, D. | |
dc.contributor.author | AFANASIEV, A. | |
dc.date.accessioned | 2023-11-21T09:11:01Z | |
dc.date.available | 2023-11-21T09:11:01Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | MOCREAC, O., TSIULYANU, D., AFANASIEV, A. Sensitivity of nanostructured tellurium films to low - reactive gases. In: Nanoscience and Nanotechnology in Security and Protection Against CBRN Threats, 20 Sept., 2019, Sozopol, Bulgaria: Book of Abstracts, 2019 p. 29. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/24939 | |
dc.description.abstract | Electrical conductivity and impedance spectra of nanostructured tellurium thin films have been investigated in different gaseous media. The films were fabricated by thermal vacuum deposition of pure tellurium (purity 99.999 %) onto Pyrex glass or oxidized silicon substrates. It is shown that the grain dimensionality and properties of the grown Te films are determined either by the growth rate or post-deposition treatment. As shown by SEM, AFM and XRD, the rate of deposition most strongly influences the microstructure of the films and their gas sensing properties. | en_US |
dc.language.iso | en | en_US |
dc.publisher | NATO Advanced Study Institute | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | nanostructured tellurium films | en_US |
dc.subject | gaseous media | en_US |
dc.title | Sensitivity of nanostructured tellurium films to low - reactive gases | en_US |
dc.type | Article | en_US |
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