ZrO2 radiation sensor

Abstract

The effects of γ– irradiation on the physical and electrical properties of ZrO2 high-k MOS radiation sensors were studied. The doses of γ–irradiation applied have been up to 80 Gray. The C-V characteristics seeing as the flat-band shift when exposed to γ– irradiation showed high sensitivity. Raman scattering spectra measurements of the undoped ZrO2 thin films grown by RF magnetron sputtering on silicon substrate have been investigated. The impact of γ – irradiation doses on the ZrO2 thin films on Raman spectra was analyzed. The intensity of the Raman signal originating from monoclinic ZrO2 is found to decrease with increasing gamma radiation.