ZrO2 radiation sensor

SHISHIYANU, Sergiu T.; GUEORGUIEV, Valentin K.; Teodor S. SHISHIYANU, Teodor S.

dc.contributor.author	SHISHIYANU, Sergiu T.
dc.contributor.author	GUEORGUIEV, Valentin K.
dc.contributor.author	Teodor S. SHISHIYANU, Teodor S.
dc.date.accessioned	2023-11-22T07:19:47Z
dc.date.available	2023-11-22T07:19:47Z
dc.date.issued	2012
dc.identifier.citation	SHISHIYANU, Sergiu T., GUEORGUIEV, Valentin K., SHISHIYANU, Teodor S. ZrO2 radiation sensor. In: Сенсорна електроника та микросiстемнi технологii: тезi доповидей СЕМСТ-5-та Мiждународна наукова технична конференцiя, 4-8 червня, 2012, Одесса, Украина, 2012 p. 120. ISBN 978–966–190–577–0.	en_US
dc.identifier.isbn	978–966–190–577–0
dc.identifier.uri	http://repository.utm.md/handle/5014/24966
dc.description	Only Abstract	en_US
dc.description.abstract	The effects of γ– irradiation on the physical and electrical properties of ZrO2 high-k MOS radiation sensors were studied. The doses of γ–irradiation applied have been up to 80 Gray. The C-V characteristics seeing as the flat-band shift when exposed to γ– irradiation showed high sensitivity. Raman scattering spectra measurements of the undoped ZrO2 thin films grown by RF magnetron sputtering on silicon substrate have been investigated. The impact of γ – irradiation doses on the ZrO2 thin films on Raman spectra was analyzed. The intensity of the Raman signal originating from monoclinic ZrO2 is found to decrease with increasing gamma radiation.	en_US
dc.language.iso	en	en_US
dc.publisher	Одеський нацiональный университет iменi I. I. Мечникова	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	radiation sensors	en_US
dc.subject	Raman scattering spectra	en_US
dc.subject	zirconium dioxide thin films	en_US
dc.title	ZrO2 radiation sensor	en_US
dc.type	Article	en_US