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Fabrication of diameter modulated gallium arsenide nanowires via anodization

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dc.contributor.author MONAICO, E. I.
dc.date.accessioned 2023-11-22T09:55:17Z
dc.date.available 2023-11-22T09:55:17Z
dc.date.issued 2022
dc.identifier.citation MONAICO, E. I. Fabrication of diameter modulated gallium arsenide nanowires via anodization. In: Материалы и структуры современной электроники: матер. X Междунар. науч. конф., Минск, 12–14 окт. 2022 г., Минск, 2022, pp. 321-324. ISBN 978-985-881-440-3. en_US
dc.identifier.isbn 978-985-881-440-3
dc.identifier.uri http://repository.utm.md/handle/5014/24969
dc.description.abstract In this paper, the technological approach for diameter modulated GaAs nanowires fabrication via electrochemical etching representing simple and cost-effective technology is demonstrated. At optimized applied potential, in the same technological process, the growth of GaAs nanowires oriented perpendicular to the crystal surface occurs. At the ame time, simultaneously growing tilted pores penetrate the nanowires resulting in modulation of nanowires along the whole length. In 40 min of anodization the as long as 200 μm nanowires were obtained. A selective modulation of nanowires via anodization at two different applied potentials is demonstrated. The tree-dimensional modulation of diameter will give the possibility to increase the area of their applications. en_US
dc.language.iso en en_US
dc.publisher Белорусский Государственный Университет en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium arsenide en_US
dc.subject porous gallium arsenide en_US
dc.subject electrochemical etching en_US
dc.subject current line oriented pores (CLO) en_US
dc.subject perforated nanowires en_US
dc.title Fabrication of diameter modulated gallium arsenide nanowires via anodization en_US
dc.type Article en_US


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