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N-Butanol sensor based on ZnO-Al2O3 heterojunction

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dc.contributor.author MAGARIU, Nicolae
dc.contributor.author TROFIM, Viorel
dc.contributor.author LUPAN, Oleg
dc.date.accessioned 2023-11-28T14:49:36Z
dc.date.available 2023-11-28T14:49:36Z
dc.date.issued 2020
dc.identifier.citation MAGARIU, Nicolae, TROFIM, Viorel, LUPAN, Oleg. N-Butanol sensor based on ZnO-Al2O3 heterojunction. In: The 24th international exhibition of inventions INVENTICA 2020, Iasi, Romania, 2020, p. 419. ISSN:1844-7880. en_US
dc.identifier.issn 1844-7880
dc.identifier.uri http://repository.utm.md/handle/5014/25053
dc.description Patent / patent application Nr. 2049 from 13.05.2020. Domain: Industrial equipment and units; Security, protection, safety – antiterrorism, disasters and accidents. en_US
dc.description.abstract Invenția se referă la tehnica și tehnologia semiconductorilor oxizi, în particular la senzori de butanol pe baza heteronjocțiunilor ZnO-Al2O3. Butanolul se folosește pe larg în calitate de solvent pentru confecționarea lacurilor și vopselelor. La n-Butanol pragul de percepție a mirosului este la nivelul 14-16 ppm, însă limita admisibilă a concentrației acestuia în aer ≈ 3,3 ppm. Din aceste considerente este necesar de confecționat senzori sensibili la concentrații mici a butanolului. Problema pe care o rezolvă invenția propusă, constă în confecționarea unui sensor de n-Butanol cu o sensibilitate mai mare la concentrații mici a gazului. en_US
dc.description.abstract The invention relates to the technique and technology of oxide semiconductors, in particular to butanol sensors based on ZnO-Al2O3 heteronjunctions. Butanol is widely used as a solvent for the manufacture of varnishes and paints. For butanol, the odor threshold is at 14-16 ppm, but the permissible limit of its concentration in air ≈ 3.3 ppm. For these reasons it is necessary to make sensors sensitive to low concentrations of butanol. The problem solved by the proposed invention is the manufacture of an n-Butanol sensor with a higher sensitivity to low gas concentrations. en_US
dc.language.iso en en_US
dc.publisher Technical University "Gheorghe Asachi" of Iași en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductori oxizi en_US
dc.subject senzori de butanol en_US
dc.subject heteronjocțiuni ZnO-Al2O3 en_US
dc.subject oxide semiconductors en_US
dc.subject butanol sensors en_US
dc.subject ZnO-Al2O3 heteronjunctions en_US
dc.title N-Butanol sensor based on ZnO-Al2O3 heterojunction en_US
dc.type Article en_US


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  • 2020
    The 24th International Exhiibiitiion of Inventiions, 29th - 31st July

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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